The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2012
Filed:
Sep. 15, 2010
Dejun Wang, Irvine, CA (US);
Dejun Wang, Irvine, CA (US);
Newport Media, Inc., Lake Forest, CA (US);
Abstract
A radio frequency wide band amplifier having a noise that does not exceed a threshold value, and a linearity better than a threshold value. The radio frequency wide band amplifier architecture includes a first stage amplifier and a second stage amplifier. The second stage amplifier includes an input source resistor (R) that receives an input voltage signal, a feedback resistor (R) directly connected to the input source resistor, a p-type metal-oxide-semiconductor (PMOS) transistor directly connected to the input source resistor. The PMOS transistor receives an output from the input source resistor. A n-type metal-oxide-semiconductor (NMOS) transistor directly connected to the input source resistor. The NMOS transistor receives an output from the input source resistor. A lumped output resistor (R) that receives an output from the feedback resistor, the PMOS transistor, and the NMOS transistor. A terminal of the lumped output impedance is connected to ground.