The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2012
Filed:
May. 04, 2010
Applicants:
Koichi Ohto, Kawasaki, JP;
Toshiyuki Takewaki, Kawasaki, JP;
Tatsuya Usami, Kawasaki, JP;
Nobuyuki Yamanishi, Kawasaki, JP;
Inventors:
Koichi Ohto, Kawasaki, JP;
Toshiyuki Takewaki, Kawasaki, JP;
Tatsuya Usami, Kawasaki, JP;
Nobuyuki Yamanishi, Kawasaki, JP;
Assignee:
Renesas Electronics Corporation, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a semiconductor device, an insulating interlayer having a groove is formed on an insulating underlayer. A silicon-diffused metal layer including no metal silicide is buried in the groove. A metal diffusion barrier layer is formed on the silicon-diffused metal layer and the insulating interlayer.