The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2012
Filed:
May. 29, 2009
Shigeru Yamada, Tokyo, JP;
Yutaka Kadogawa, Tokyo, JP;
Shigeru Yamada, Tokyo, JP;
Yutaka Kadogawa, Tokyo, JP;
Oki Semiconductor Co., Ltd., Tokyo, JP;
Abstract
To improve connection reliability of a through electrode in a semiconductor device, and prevent deterioration of electrical characteristics due to a residue generated from a pad at the time of forming the through electrode. A contact area between a pad and a conductor layer is equal to a diameter of a hole of an opening provided in a silicon substrate. Consequently, it is possible to increase the contact area as compared with a conventional configuration. This improves the connection reliability. Furthermore, a residue containing metal is attached to the outside of an insulation film in the manufacturing process. Consequently, the residue is prevented from contacting a silicon substrate body. Also, heavy metals, such as Cu, in the residue are prevented from being diffused into the silicon substrate body. Therefore, it is possible to prevent the deterioration of electrical characteristics.