The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8115267 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 14, 2012

Filed:

Jul. 21, 2009
Applicant:

Noriyuki Miura, Miyagi, JP;

Inventor:

Noriyuki Miura, Miyagi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/113 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device which comprises an SOI substrate having an insulating layer between a semiconductor substrate layer and a semiconductor layer in a surface of which a semiconductor element is formed, and at least one external terminal provided, via an insulating film, on a surface of the semiconductor substrate layer and electrically connected to the semiconductor element. The semiconductor device further comprises a contact portion constituted by a conductive film reaching through the insulating film to electrically connect to the semiconductor substrate layer; and a potential fixing electrode provided, via the insulating film, on the surface of the semiconductor substrate layer and connected to the contact portion.


Find Patent Forward Citations

Miura, Noriyuki. (2012). Semiconductor device and fabrication method of the same (U.S. Patent No. 8115267). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8115267

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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