The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2012

Filed:

Aug. 31, 2007
Applicants:

Haruki Yoneda, Ogaki, JP;

Hideaki Fujiwara, Hashima, JP;

Inventors:

Haruki Yoneda, Ogaki, JP;

Hideaki Fujiwara, Hashima, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes an inverter having an NMOSFET and a PMOSFET having sources, drains and gate electrodes respectively, the drains being connected to each other and the gate electrodes being connected to each other, and a pnp bipolar transistor including a collector (C), a base (B) and an emitter (E), the base (B) receiving an output of the inverter.


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