The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2012
Filed:
Feb. 07, 2007
Richard B. Merrill, Woodside, CA (US);
Richard B. Merrill, Woodside, CA (US);
Foveon, Inc., Santa Clara, CA (US);
Abstract
A multicolor CMOS pixel sensor formed in a p-type semiconductor region includes a first detector formed from an n-type region of semiconductor material located near the surface of the p-type region. A first pinned p-type region is formed at the surface of the p-type region over the first detector, and has a surface portion extending past an edge of the pinned p-type region. A second detector is formed from an n-type region located in the p-type semiconductor region below the first detector. A second-detector n-type deep contact plug is in contact with the second detector and extends to the surface of the p-type semiconductor region. A second pinned p-type region is formed at the surface of the p-type semiconductor region over the top of the second-detector n-type deep contact plug. A surface portion of the second-detector deep contact plug extends past an edge of the second pinned p-type region.