The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2012
Filed:
Jan. 26, 2009
Juejun HU, Cambridge, MA (US);
Anuradha Agarwal, Weston, MA (US);
Lionel C. Kimerling, Concord, MA (US);
Juejun Hu, Cambridge, MA (US);
Anuradha Agarwal, Weston, MA (US);
Lionel C. Kimerling, Concord, MA (US);
Massachusetts Institute of Technology, Cambridge, MA (US);
Abstract
An infrared photodiode structure is provided. The infrared photodiode structure includes a doped semiconductor layer having ions of certain conductivity. An active photodetecting region is positioned on the doped semiconductor layer for detecting an infrared light signal. The active photodetecting region includes one or more amorphous semiconductor materials so as to allow for high signal-to-noise ratio being achieved by invoking carrier hopping and band conduction, under dark and illuminated conditions.