The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2012
Filed:
May. 01, 2009
Applicants:
Gyeongsu Park, Suwon-si, KR;
Eunkyung Lee, Suwon-si, KR;
Jaehak Lee, Seoul, KR;
Byounglyong Choi, Seoul, KR;
Jaegwan Chung, Seoul, KR;
Sung Heo, Busan, KR;
Inventors:
Gyeongsu Park, Suwon-si, KR;
Eunkyung Lee, Suwon-si, KR;
Jaehak Lee, Seoul, KR;
Byounglyong Choi, Seoul, KR;
Jaegwan Chung, Seoul, KR;
Sung Heo, Busan, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/00 (2006.01); H01L 47/00 (2006.01); H01L 31/00 (2006.01); H01L 21/31 (2006.01); H01L 21/469 (2006.01); G02B 6/036 (2006.01); G02B 6/02 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided are a silica nanowire that includes silicon nanodots and a method of preparing the same. The silica nanowire has excellent capacitance characteristics and improved light absorption ability, and thus can be effectively used in a variety of fields, such as various semiconductor devices including CTF memory, image sensors, photodetectors, light emitting diodes, laser diodes, and the like.