Semiconductor device, and semiconductor device obtained by such a method

Abstract

The invention relates to a method of manufacturing a semiconductor device with a substrate and a semiconductor body, whereby in the semiconductor body a semiconductor element is formed by means of a mesa-shaped protrusion of the semiconductor body, which is formed on the surface of the semiconductor device as a nano wire, whereupon a layer of a material is deposited over the semiconductor body and the resulting structure is subsequently planarized in a chemical-mechanical polishing process such that an upper side of the nano wire becomes exposed. According to the invention, a further layer of a further material is deposited over the semiconductor body with the nano wire before the layer of the material is deposited, which further layer is given a thickness smaller than the height of the nano wire, and a material is chosen for the further material such that, viewed in projection, the transition between the layer and the further layer is discernible before the nano wire is reached. In this way the nano wire can be exposed more accurately in the device. This increases the yield of useful devices.