The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2012
Filed:
Oct. 18, 2010
Kyu-ha Lee, Yongin-si, KR;
Min-seung Yoon, Seoul, KR;
Ui-hyoung Lee, Seoul, KR;
Ju-ii Choi, Suwon-si, KR;
Nam-seog Kim, Yongin-si, KR;
Keum-hee MA, Suwon-si, KR;
Kyu-Ha Lee, Yongin-si, KR;
Min-Seung Yoon, Seoul, KR;
Ui-Hyoung Lee, Seoul, KR;
Ju-Ii Choi, Suwon-si, KR;
Nam-Seog Kim, Yongin-si, KR;
Keum-Hee Ma, Suwon-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A method of manufacturing semiconductor device includes preparing a substrate having a first surface and a second surface opposite to the first surface. A first insulation layer is formed on the second surface. A sacrificial layer is formed on the first insulation layer. An opening is formed to penetrate through the substrate and extend from the first surface to a portion of the sacrificial layer. A second insulation layer is formed on an inner wall of the opening. A plug is formed to fill the opening. The sacrificial layer is removed to expose a lower portion of the plug through the second surface.