The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2012
Filed:
Nov. 10, 2010
Phil Christopher Felice Paone, Rochester, MN (US);
David P. Paulsen, Dodge Center, MN (US);
John E. Sheets, Ii, Zumbrota, MN (US);
Kelly L. Williams, Rochester, MN (US);
Phil Christopher Felice Paone, Rochester, MN (US);
David P. Paulsen, Dodge Center, MN (US);
John E. Sheets, II, Zumbrota, MN (US);
Kelly L. Williams, Rochester, MN (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A 3-D (Three Dimensional) inverter having a single gate electrode. The single gate electrode has a first gate dielectric between the gate electrode and a body of a first FET (Field Effect transistor) of a first doping type, the first FET having first source/drain regions in a semiconductor substrate, or in a well in the semiconductor substrate. The single gate electrode has a second gate dielectric between the gate electrode and a body of a second FET of opposite doping to the first FET. Second source/drain regions of the second FET are formed from epitaxial layers grown over the first source/drain regions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile