The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2012

Filed:

Oct. 30, 2009
Applicants:

Hee Young Kim, Daejeon, KR;

Kyung Koo Yoon, Daejeon, KR;

Yong Ki Park, Daejeon, KR;

Won Choon Choi, Daejeon, KR;

Inventors:

Hee Young Kim, Daejeon, KR;

Kyung Koo Yoon, Daejeon, KR;

Yong Ki Park, Daejeon, KR;

Won Choon Choi, Daejeon, KR;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G05D 16/00 (2006.01); G05B 1/00 (2006.01); B01J 19/00 (2006.01); B01J 8/18 (2006.01); F27B 15/00 (2006.01); F27B 15/08 (2006.01); F27B 15/14 (2006.01); F27B 15/16 (2006.01); C01B 33/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention relates to a high-pressure fluidized bed reactor for preparing granular polycrystalline silicon, comprising (a) a reactor tube, (b) a reactor shell encompassing the reactor tube, (c) an inner zone formed within the reactor tube, where a silicon particle bed is formed and silicon deposition occurs, and an outer zone formed in between the reactor shell and the reactor tube, which is maintained under the inert gas atmosphere, and (d) a controlling means to keep the difference between pressures in the inner zone and the outer zone being maintained within the range of 0 to 1 bar, thereby enabling to maintain physical stability of the reactor tube and efficiently prepare granular polycrystalline silicon even at relatively high reaction pressure.


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