The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2012
Filed:
Apr. 14, 2006
Pamela M. Visintin, Red Hook, NY (US);
Michael B. Korzenski, Danbury, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
Pamela M. Visintin, Red Hook, NY (US);
Michael B. Korzenski, Danbury, CT (US);
Thomas H. Baum, New Fairfield, CT (US);
Advanced Technology Materials, Inc., Danbury, CT (US);
Abstract
A method and composition for removing bulk and ion-implanted photoresist and/or post-etch residue material from densely patterned microelectronic devices is described. The composition includes a co-solvent, a chelating agent, optionally an ion pairing reagent, and optionally a surfactant. The composition may further include dense fluid. The compositions effectively remove the photoresist and/or post-etch residue material from the microelectronic device without substantially over-etching the underlying silicon-containing layer(s) and metallic interconnect materials.