The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2012
Filed:
Jul. 02, 2008
Masayuki Jyumonji, Yokohama, JP;
Hiroyuki Ogawa, Yokohama, JP;
Masakiyo Matsumura, Yokohama, JP;
Masato Hiramatsu, Yokohama, JP;
Yoshinobu Kimura, Yokohama, JP;
Yukio Taniguchi, Yokohama, JP;
Tomoya Kato, Yokohama, JP;
Masayuki Jyumonji, Yokohama, JP;
Hiroyuki Ogawa, Yokohama, JP;
Masakiyo Matsumura, Yokohama, JP;
Masato Hiramatsu, Yokohama, JP;
Yoshinobu Kimura, Yokohama, JP;
Yukio Taniguchi, Yokohama, JP;
Tomoya Kato, Yokohama, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.