The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 14, 2012
Filed:
Oct. 31, 2008
Hyon-jong Cho, Gumi-si, KR;
Seung-ho Shin, Seoul, KR;
Ji-hun Moon, Gumi-si, KR;
Hong-woo Lee, Gumi-si, KR;
Young-ho Hong, Gumi-si, KR;
Hyon-Jong Cho, Gumi-si, KR;
Seung-Ho Shin, Seoul, KR;
Ji-Hun Moon, Gumi-si, KR;
Hong-Woo Lee, Gumi-si, KR;
Young-Ho Hong, Gumi-si, KR;
Siltron, Inc., Gumi, KR;
Abstract
The present invention relates to a semiconductor single crystal growth method, which uses a Czochralski process for growing a semiconductor single crystal through a solid-liquid interface by dipping a seed into a semiconductor melt received in a quartz crucible and pulling up the seed while rotating the quartz crucible and applying a strong horizontal magnetic field, wherein the seed is pulled up while the quartz crucible is rotated with a rate between 0.6 rpm and 1.5 rpm.