High power semiconductor opto-electronic device

Abstract

Semiconductor laser diodes, particularly broad area single emitter (BASE) laser diodes of high light output power, are commonly used in opto-electronics. Light output power and stability of such laser diodes are of crucial interest and any degradation during normal use is a significant disadvantage. The present invention concerns an improved design of such laser diodes, the improvement in particular significantly minimizing or avoiding degradation of such laser diodes at very high light output powers by controlling the current flow in the laser diode in a defined way. The minimization or avoidance of (front) end section degradation of such laser diodes significantly increases long-term stability compared to prior art designs. This is achieved by controlling the carrier injection into the laser diode in the vicinity of its facets in such a way that abrupt injection current peaks are avoided. To this, a current-blocking isolation layer () is shaped at its edge or border in such a way that it shows an uneven or partly discontinuous mechanical structure leading to a decreasing effective isolation towards the edge of said isolation layer, thus providing an essentially non-abrupt or even approximately continuous transition between isolated and non-isolated areas.