The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2012
Filed:
May. 12, 2009
Toshihiro Ishii, Miyagi, JP;
Kengo Makita, Kanagawa, JP;
Naoto Jikutani, Miyagi, JP;
Kazuhiro Harasaka, Miyagi, JP;
Shunichi Sato, Miyagi, JP;
Satoru Sugawara, Miyagi, JP;
Toshihiro Ishii, Miyagi, JP;
Kengo Makita, Kanagawa, JP;
Naoto Jikutani, Miyagi, JP;
Kazuhiro Harasaka, Miyagi, JP;
Shunichi Sato, Miyagi, JP;
Satoru Sugawara, Miyagi, JP;
Ricoh Company, Ltd., Tokyo, JP;
Abstract
A disclosed surface-emitting laser includes a substrate and multiple semiconductor layers stacked on the substrate. A normal of the principal plane of the substrate is inclined with respect to one of crystal orientations <1 0 0> toward one of crystal orientations <1 1 1>. The semiconductor layers include a resonator structure including an active layer; and a semiconductor multilayer mirror stacked on the resonator structure. The semiconductor multilayer mirror includes a confined structure where a current passage area is surrounded by an oxidized area including at least an oxide generated by oxidation of a part of a selective oxidation layer containing aluminum. A strain field caused by the oxidation is present at least in a part of the vicinity of the oxidized area. In the strain field, the amount of strain in a first axis direction is different from the amount of strain in a second axis direction.