The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2012
Filed:
Apr. 16, 2010
Bo-young Seo, Suwon-si, KR;
Hee-seog Jeon, Suwon-si, KR;
Kwang-tae Kim, Suwon-si, KR;
Ji-hoon Park, Seongnam-si, KR;
Myung-jo Chun, Hwaseong-si, KR;
Bo-Young Seo, Suwon-si, KR;
Hee-Seog Jeon, Suwon-si, KR;
Kwang-Tae Kim, Suwon-si, KR;
Ji-Hoon Park, Seongnam-si, KR;
Myung-Jo Chun, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A non-volatile semiconductor memory device capable of reducing program disturb and a method of programming the same are provided. A bit line connected to a non-selected memory cell in the same block as a selected memory cell enters a floating state by inactivating a bit line selection switch, so that voltage levels of an first conductivity type channel and a source/drain terminal formed in a pocket second conductivity type well below a memory transistor have an intermediate level of a voltage level of a selection line and the pocket P type well. Therefore, program disturb caused by FN tunneling and junction hot electrons can be inhibited.