The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2012

Filed:

May. 02, 2007
Applicants:

Sunil Bhave, Ithaca, NY (US);

Lih Feng Cheow, Perak, MY;

Inventors:

Sunil Bhave, Ithaca, NY (US);

Lih Feng Cheow, Perak, MY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03H 9/46 (2006.01); H03H 3/013 (2006.01);
U.S. Cl.
CPC ...
Abstract

A tunable MEMS filter is disclosed, having a substrate with first and second isolated substrate areas. First and second anchor points are coupled to the substrate. A base is coupled to the first and second anchor points by first and second coupling beams, respectively. A dielectric layer is coupled to the base. An input conductor is coupled to the at least one dielectric layer. An output conductor is coupled to the at least one dielectric layer. A method of tuning a center frequency and a bandwidth of a MEMS resonator filter is also disclosed. A first bias voltage is adjusted between a base layer and input and output conductor layers. A second bias voltage is adjusted between the base layer and isolated substrate areas. The center frequency and the bandwidth are determined until the adjustments to the bias voltages provide a desired center frequency and a desired bandwidth.


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