The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2012

Filed:

May. 18, 2010
Applicants:

Hiroyuki Hirakawa, Osaka, JP;

Yasuo Imura, Osaka, JP;

Ayae Nagaoka, Osaka, JP;

Tadashi Iwamatsu, Osaka, JP;

Inventors:

Hiroyuki Hirakawa, Osaka, JP;

Yasuo Imura, Osaka, JP;

Ayae Nagaoka, Osaka, JP;

Tadashi Iwamatsu, Osaka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02F 1/335 (2006.01); G03G 15/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A light emitting element of the present invention includes an electrode substrate; a thin-film electrode; and an electron acceleration layer sandwiched between the electrode substrate and the thin-film electrode. In the electron acceleration layer, as a result of a voltage applied between the electrode substrate and the thin-film electrode, electrons are accelerated so as to be turned into hot electrons. The hot electrons excite surfaces of the silicon fine particles contained in the electron acceleration layer so that the surfaces of the silicon fine particles emit light. Such a light emitting element of the present invention is a novel light emitting element, which has not been achieved by the conventional techniques. That is, the light emitting element of the present invention is able to (i) be produced by using a silicon material, which is available at low price, through a simple production method, and (ii) efficiently emit light.


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