The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2012
Filed:
Jan. 27, 2009
Yasuhiro Yoshimura, Kasumigaura, JP;
Naotaka Tanaka, Kasumigaura, JP;
Michihiro Kawashita, Hitachinaka, JP;
Takahiro Naito, Duesseldorf, DE;
Takashi Akazawa, Musashimurayama, JP;
Yasuhiro Yoshimura, Kasumigaura, JP;
Naotaka Tanaka, Kasumigaura, JP;
Michihiro Kawashita, Hitachinaka, JP;
Takahiro Naito, Duesseldorf, DE;
Takashi Akazawa, Musashimurayama, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
After forming a ring-shaped trench penetrating through a semiconductor substrate from a rear surface side thereof and forming an insulating film inside the trench and on the rear surface of the semiconductor substrate, a through hole is formed in the insulating film and semiconductor substrate on an inner side of the ring-shaped trench from the rear surface side, thereby exposing a surface protection insulating film formed on a front surface of the semiconductor substrate at a bottom of the through hole. After removing the surface protection insulating film at the bottom of the through hole to form an opening to expose an element surface electrode, a contact electrode connected to the element surface electrode is formed on inner walls of the through hole and opening, and a pad electrode made of the same layer as the contact electrode is formed on the rear surface of the semiconductor substrate.