The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2012
Filed:
Aug. 22, 2007
Shucheng Chu, Hamamatsu, JP;
Hirofumi Kan, Hamamatsu, JP;
Shucheng Chu, Hamamatsu, JP;
Hirofumi Kan, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
A semiconductor is provided with: a silicon substrateof a first conductivity type, including a first surface Sand a second surface S; a silicon layerof a second conductivity type, arranged on the first surface Sof the silicon substrate, including a third surface Sopposite a junction surface with the silicon substrate; a first electrodearranged on the second surface S; a second electrodearranged on the third surface S; and an argon added areaformed in a semiconductor area formed of the silicon substrateand the silicon layer. The argon added areaincludes an area indicating an argon concentration of a minimum of 1×10cmand a maximum of 2×10cm.