The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2012

Filed:

Jan. 04, 2010
Applicants:

Jinho Kim, Gyeonggi-do, KR;

Sunghoi Hur, Seoul, KR;

Hansoo Kim, Gyeonggi-do, KR;

Younggoan Jang, Gyeonggi-do, KR;

Sunil Shim, Seoul, KR;

Inventors:

Jinho Kim, Gyeonggi-do, KR;

Sunghoi Hur, Seoul, KR;

Hansoo Kim, Gyeonggi-do, KR;

Younggoan Jang, Gyeonggi-do, KR;

Sunil Shim, Seoul, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A three-dimensional semiconductor device includes a vertical channel pattern on the substrate, a plurality of cell gate patterns and a select gate pattern stacked on the substrate along the sidewall of the vertical channel pattern, a charge storage pattern between the vertical channel pattern and the cell gate pattern and a select gate pattern between the vertical channel pattern and the select gate pattern. The select gate pattern has a different work function from the cell gate pattern.


Find Patent Forward Citations

Kim, Jinho. (2012). Three-dimensional semiconductor devices including select gate patterns having different work function from cell gate patterns (U.S. Patent No. 8110834). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8110834

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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