The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2012

Filed:

Dec. 30, 2008
Applicants:

Yong Soo Cho, Daegu, KR;

Chan Ki Ha, Incheon, KR;

Byoung Ho Lim, Gyeongsangbuk-Do, KR;

Cheol SE Kim, Daegu, KR;

Kyo Ho Moon, Daegu, KR;

Kwang Sik OH, Gyeongsangbuk-Do, KR;

Eung DO Kim, Gyeongsangbuk-Do, KR;

Jae Hyung JO, Busan, KR;

Min Jae Lee, Daegu, KR;

Inventors:

Yong Soo Cho, Daegu, KR;

Chan Ki Ha, Incheon, KR;

Byoung Ho Lim, Gyeongsangbuk-Do, KR;

Cheol Se Kim, Daegu, KR;

Kyo Ho Moon, Daegu, KR;

Kwang Sik Oh, Gyeongsangbuk-Do, KR;

Eung Do Kim, Gyeongsangbuk-Do, KR;

Jae Hyung Jo, Busan, KR;

Min Jae Lee, Daegu, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin film transistor (TFT) for a liquid crystal display device includes a gate electrode, a source electrode, a drain electrode, an active region including a first semiconductor layer and a second semiconductor layer interposed within the first semiconductor layer, and an ohmic contact layer formed on the active region, wherein the source and drain electrodes are formed on the ohmic contact layer.


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