The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2012
Filed:
May. 07, 2009
Dae-hyuk Kang, Gyeonggi-do, KR;
Young-hoo Kim, Gyeonggi-do, KR;
Chang-ki Hong, Gyeonggi-do, KR;
Kun-tack Lee, Gyeonggi-do, KR;
Jae-dong Lee, Gyeonggi-do, KR;
Dae-hong Eom, Gyeonggi-do, KR;
Jeong-nam Han, Seoul, KR;
Dae-Hyuk Kang, Gyeonggi-do, KR;
Young-Hoo Kim, Gyeonggi-do, KR;
Chang-Ki Hong, Gyeonggi-do, KR;
Kun-Tack Lee, Gyeonggi-do, KR;
Jae-Dong Lee, Gyeonggi-do, KR;
Dae-Hong Eom, Gyeonggi-do, KR;
Jeong-Nam Han, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
An insulation layer may be formed on an object having a contact region. The insulation layer may be partially etched to form an opening exposing the contact region. A material layer including silicon and oxygen may be formed on the exposed contact region. A metal layer may be formed on the material layer including silicon and oxygen. The material layer including silicon and oxygen may be reacted with the metal layer to form a metal oxide silicide layer at least on the contact region. A conductive layer may be formed on the metal oxide silicide layer to fill up the opening.