The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2012
Filed:
Dec. 10, 2009
Sang-yeol Kang, Suwon-si, KR;
Jong-cheol Lee, Seoul, KR;
Ki-vin Lim, Seongnam-si, KR;
Hoon-sang Choi, Seoul, KR;
Eun-ae Chung, Seoul, KR;
Sang-yeol Kang, Suwon-si, KR;
Jong-cheol Lee, Seoul, KR;
Ki-vin Lim, Seongnam-si, KR;
Hoon-sang Choi, Seoul, KR;
Eun-ae Chung, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor device including a multilayer dielectric film and a method for fabricating the semiconductor device are disclosed. The multilayer dielectric film includes a type-one dielectric film having a tetragonal crystalline structure, wherein the type-one dielectric film comprises a first substance. The multilayer dielectric film also comprises a type-two dielectric film also having a tetragonal crystalline structure, wherein the type-two dielectric film comprises a second substance different from the first substance and a dielectric constant of the type-two dielectric film is greater than a dielectric constant of the type-one dielectric film.