The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2012
Filed:
Sep. 20, 2009
Takuya Futase, Tokyo, JP;
Takuya Futase, Tokyo, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
To provide a semiconductor device with improved reliability which includes a metal silicide layer formed by a salicide process. After forming gate electrodes, an n-type semiconductor region, and a p-type semiconductor region for a source or drain, a NiPtalloy film is formed over a semiconductor substrate. The alloy film reacts with the gate electrodes, the n-type semiconductor region, and the p-type semiconductor region by a first heat treatment to form a metal silicide layer in a (NiPt)Si phase. At this time, the first heat treatment is performed at a heat treatment temperature where a diffusion coefficient of Ni is larger than that of Pt. Further, the first heat treatment is performed such that a reacted part of the alloy film remains at the metal silicide layer. This results in y>x. Then, after removing the unreacted part of the alloy film, the metal silicide layer is further subjected to a second heat treatment to form a metal silicide layer in a NiPtSi phase.