The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2012
Filed:
Apr. 16, 2009
Ya-tang Yang, Cupertino, CA (US);
Beom Soo Park, San Jose, CA (US);
Tae Kyung Won, San Jose, CA (US);
Soo Young Choi, Fremont, CA (US);
John M. White, Hayward, CA (US);
Ya-Tang Yang, Cupertino, CA (US);
Beom Soo Park, San Jose, CA (US);
Tae Kyung Won, San Jose, CA (US);
Soo Young Choi, Fremont, CA (US);
John M. White, Hayward, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method and apparatus for forming a thin film transistor is provided. A gate dielectric layer is formed, which may be a bilayer, the first layer deposited at a low rate and the second deposited at a high rate. In some embodiments, the first dielectric layer is a silicon rich silicon nitride layer. An active layer is formed, which may also be a bilayer, the first active layer deposited at a low rate and the second at a high rate. The thin film transistors described herein have superior mobility and stability under stress.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile