The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2012
Filed:
Jan. 26, 2010
Cheng Wei Chou, Houbi Township, Tainan County, TW;
Hsiao Wen Zan, Zhudong Township, Hsinchu County, TW;
Jenn-chang Hwang, Hsinchu, TW;
Chung Hwa Wang, Huatan Township, Changhua County, TW;
LI Shiuan Tsai, Kaohsiung, TW;
Wen Chieh Wang, Kaohsiung, TW;
Cheng Wei Chou, Houbi Township, Tainan County, TW;
Hsiao Wen Zan, Zhudong Township, Hsinchu County, TW;
Jenn-Chang Hwang, Hsinchu, TW;
Chung Hwa Wang, Huatan Township, Changhua County, TW;
Li Shiuan Tsai, Kaohsiung, TW;
Wen Chieh Wang, Kaohsiung, TW;
National Tsing Hua University, Hsinchu, TW;
Abstract
A method of fabricating an organic thin film transistor is disclosed, which comprises steps of (S1) forming a gate electrode on a substrate; (S2) forming a gate insulating layer on the gate electrode; (S3) providing a gas on the surface of the gate insulating layer to form hydrophobic molecules on the surface of the gate insulating layer; (S4) forming an organic semiconductor layer, a source electrode, and a drain electrode over the gate insulating layer having hydrophobic molecules thereon, wherein the gas of step (S3) is at least one selected from the group consisting of halogen-substituted hydrocarbon, un-substituted hydrocarbon, and the mixtures thereof. The method of the present invention utilizes gases comprising carbon or fluorine atom to perform surface treatment on the surface of the gate insulating layer, therefore the hydrophobic character of the surface of the gate insulating layer can be enhanced and the electrical properties of the OTFT can be improved. Also, a method of surface treatment for the gate insulating layer is disclosed.