The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2012

Filed:

Jun. 03, 2010
Applicants:

Ajeet Rohatgi, Marietta, GA (US);

Vijay Yelundur, Canton, GA (US);

Vinodh Chandrasekaran, Suwanee, GA (US);

Preston Davis, Atlanta, GA (US);

Ben Damiani, Atlanta, GA (US);

Inventors:

Ajeet Rohatgi, Marietta, GA (US);

Vijay Yelundur, Canton, GA (US);

Vinodh Chandrasekaran, Suwanee, GA (US);

Preston Davis, Atlanta, GA (US);

Ben Damiani, Atlanta, GA (US);

Assignee:

Suniva, Inc., Norcross, GA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
Abstract

Solar cells and methods for their manufacture are disclosed. An example method may include providing a p-type doped silicon substrate and introducing n-type dopant to a first and second region of the front surface of the substrate by ion implantation so that the second region is more heavily doped than the first region. The substrate may be subjected to a single high-temperature anneal cycle to activate the dopant, drive the dopant into the substrate, produce a p-n junction, and form a selective emitter. Oxygen may be introduced during the single anneal cycle to form in situ front and back passivating oxide layers. Fire-through of front and back contacts as well as metallization with contact connections may be performed in a single co-firing operation. Associated solar cells are also provided.


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