The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2012

Filed:

Oct. 28, 2009
Applicant:

Feng-chien Hsieh, Houli Township, Taichung County, TW;

Inventor:

Feng-Chien Hsieh, Houli Township, Taichung County, TW;

Assignee:

Nexpower Technology Corp., Taichung County, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 25/00 (2006.01); H01L 31/109 (2006.01);
U.S. Cl.
CPC ...
Abstract

A stacked-layered thin film solar cell and a manufacturing method thereof are provided. The stacked-layered thin film solar cell includes a front electrode layer, a stacked-layered light-absorbing structure, and a back electrode layer. The stacked-layered light-absorbing structure has a p-i-n-type layered structure and consists essentially of I-III-VI compounds, wherein the group III elements at least include indium (In) and aluminum (Al). The p-type layer of the stacked-layered light-absorbing structure is near the front electrode layer while the n-type layer is near the back electrode layer. The Al/In concentration ratio in the p-type layer is higher than that in the n-type layer.


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