The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2012
Filed:
May. 13, 2009
Applicants:
Jean-paul Garandet, Le Bourget du Lac, FR;
Béatrice Drevet, Grenoble, FR;
Luc Federzoni, Bourgoin-Jallieu, FR;
Inventors:
Jean-Paul Garandet, Le Bourget du Lac, FR;
Béatrice Drevet, Grenoble, FR;
Luc Federzoni, Bourgoin-Jallieu, FR;
Assignee:
Commissariat a l'Energie Atomique, Paris, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 5/16 (2006.01); G11B 11/105 (2006.01); H01R 33/00 (2006.01); C30B 1/00 (2006.01); C30B 3/00 (2006.01); C30B 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A silicon wafer for a photovoltaic cell is produced by a debinding step of a self-supported film formed of at least one main thin layer comprising at least 50% volume of silicon particles, devoid of silicon oxide and encapsulated in a polymer matrix protecting them against oxidation, followed by a sintering step to form the silicon wafer.