The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2012
Filed:
Oct. 23, 2006
Oiang Chen, Sunnyvale, CA (US);
Zhi-yuan Wu, Union City, CA (US);
Richard Yu-kuwan Su, Berkeley, CA (US);
Oiang Chen, Sunnyvale, CA (US);
Zhi-Yuan Wu, Union City, CA (US);
Richard Yu-Kuwan Su, Berkeley, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
According to one exemplary embodiment, a method for determining a self-heating free drain current in a transistor corresponding to a channel temperature not affected by a drain DC current includes measuring at least three unique drain currents of a transistor corresponding to at least three unique ambient temperatures. The method further includes determining at least three unique channel temperatures of the transistor corresponding to the at least three unique drain currents, thereby establishing a current-temperature relationship for the transistor. The method further includes determining the self-heating free drain current of the transistor utilizing the current-temperature relationship.