The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2012
Filed:
Nov. 05, 2008
Sei Seung Yoon, San Diego, CA (US);
Mehdi Hamidi Sani, San Diego, CA (US);
Seung H. Kang, San Diego, CA (US);
Sei Seung Yoon, San Diego, CA (US);
Mehdi Hamidi Sani, San Diego, CA (US);
Seung H. Kang, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
Systems, circuits and methods for controlling the word line voltage applied to word line transistors in Spin Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) are disclosed. One embodiment is directed to a STT-MRAM including a bit cell having a magnetic tunnel junction (MTJ) and a word line transistor. The bit cell is coupled to a bit line and a source line. A word line driver is coupled to a gate of the word line transistor. The word line driver is configured to provide a word line voltage greater than a supply voltage below a transition voltage of the supply voltage and to provide a voltage less than the supply voltage for supply voltages above the transition voltage.