The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2012
Filed:
Feb. 18, 2010
Tomoyuki Nakamura, Moriyama, JP;
Makoto Matsuda, Moriyama, JP;
Tomoyuki Nakamura, Moriyama, JP;
Makoto Matsuda, Moriyama, JP;
Murata Manufacturing Co., Ltd., Nagaokakyo-Shi, Kyoto-fu, JP;
Abstract
A laminated ceramic capacitor capable of achieving both a high dielectric constant and high electrical insulation property even when the thickness of the dielectric ceramic layer is less than 1 μm, contains a plurality of laminated dielectric ceramic layers and a plurality of internal electrodes at interfaces between the dielectric ceramic layers, where dielectric ceramic layers are made of dielectric ceramic containing a perovskite-type compound represented by ABOas a main ingredient, and R (R is La or the like), M (M is Mn or the like) and Si as accessory ingredients. When crystal grains of the dielectric ceramic are classified into first crystal grains having grain sizes larger than one-fourth of the thickness of the dielectric ceramic layer and second crystal grains having grain sizes not larger than one-fourth of the thickness of the dielectric ceramic layer, the first crystal grains and the second crystal grains have a peak Pand Pof grain size distribution, and the areal percentage of the first crystal grains on a cross section of the dielectric ceramic layer is 41 to 69%.