The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2012
Filed:
Mar. 05, 2010
Kunliang Zhang, Santa Clara, CA (US);
Yun-fei LI, Fremont, CA (US);
Chyu-jiuh Torng, Pleasanton, CA (US);
Chen-jung Chien, Sunnyvale, CA (US);
Kunliang Zhang, Santa Clara, CA (US);
Yun-Fei Li, Fremont, CA (US);
Chyu-Jiuh Torng, Pleasanton, CA (US);
Chen-Jung Chien, Sunnyvale, CA (US);
Headway Technologies, Inc., Milpitas, CA (US);
Abstract
A hard bias structure for biasing a free layer in a MR element within a read head is comprised of a composite hard bias layer having a CoCrPt/CoCrPtconfiguration. The upper CoCrPtlayer has a larger Hc value and a thickness about 2 to 10 times greater than that of the CoCrPtlayer. The hard bias structure may also include a BCC underlayer such as FeCoMo which enhances the magnetic moment of the hard bias structure. Optionally, the thickness of the CoCrPtlayer is zero and the CoCrPtlayer is formed on the BCC underlayer. The present invention also encompasses a laminated hard bias structure. The Mrt value for the hard bias structure may be optimized by adjusting the thicknesses of the BCC underlayer and CoCrPt layers. As a result, a larger process window is realized and lower asymmetry output during a read operation is achieved.