The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2012
Filed:
May. 09, 2009
Prakash Easwaran, Bangalore, IN;
Prasenjit Bhowmik, Bangalore, IN;
Sumeet Mathur, Bangalore, IN;
Cosmic Circuits Private Limited, Bangalore, IN;
Abstract
A method for biasing a MOS transistor includes AC coupling an input signal from an amplifier stage to a gate of the MOS transistor. The method includes connecting a pair of diodes in an opposing parallel configuration to a bias transistor and a current source. Further, the method includes generating a DC bias voltage through the bias transistor and the current source. The method also includes clamping the voltage at drain of the bias transistor to a fixed voltage by a clamping circuit. Further, the method includes coupling the DC bias voltage to the gate of the MOS transistor through the pair of diodes.