The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2012
Filed:
Nov. 06, 2008
Miwako Akiyama, Tokyo, JP;
Yusuke Kawaguchi, Kanagawa-ken, JP;
Yoshihiro Yamaguchi, Saitama-ken, JP;
Miwako Akiyama, Tokyo, JP;
Yusuke Kawaguchi, Kanagawa-ken, JP;
Yoshihiro Yamaguchi, Saitama-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A vertical power semiconductor device includes a first semiconductor layer of a first conductivity type formed in both a cell section and a termination section, the termination section surrounding the cell section, a second semiconductor layer of a second conductivity type formed on the first semiconductor layer in the cell section, a third semiconductor layer of the first conductivity type formed in part on the second semiconductor layer, and a guard ring layer of the second conductivity type formed on the first semiconductor layer in the termination section. Net impurity concentration in the guard ring layer is generally sloped so as to be relatively high on its lower side and relatively low on its upper side. Alternatively, the net impurity concentration in the guard ring layer is constant.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile