The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2012
Filed:
Jul. 27, 2006
Toshiaki Sano, Tachikawa, JP;
Tomoyuki Ishii, Kokubunji, JP;
Norifumi Kameshiro, Kodaira, JP;
Toshiyuki Mine, Fussa, JP;
Toshiaki Sano, Tachikawa, JP;
Tomoyuki Ishii, Kokubunji, JP;
Norifumi Kameshiro, Kodaira, JP;
Toshiyuki Mine, Fussa, JP;
Renesas Electronics Corporation, Kawasaki-shi, JP;
Abstract
To achieve a stable reading operation in a memory cell having a gain-cell structure, a write transistor is configured, which has a source and a drain that are formed on the insulating layer, a channel formed on the insulating layer and between the source and the drain and made of a semiconductor, and a gate formed on an upper portion of the insulating layer and between the source and the drain and electrically insulated from the channel by a gate insulating film and controlling the potential of the channel. The channel electrically connects the source and the drain on the side surfaces of the source and the drain.