The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2012
Filed:
Dec. 13, 2005
Yukiko Furukawa, Veldhoven, NL;
Cornelius a H a Mutsaers, Veldhoven, NL;
Yukiko Furukawa, Veldhoven, NL;
Cornelius A H A Mutsaers, Veldhoven, NL;
NXP B.V., Eindhoven, NL;
Abstract
A semiconductor device includes a channel regionof semiconductor, a conductive gate electrodeadjacent to the channel regionand a gate dielectricbetween the conductive gate electrodeand the channel region. The gate dielectricis formed of a material that is a ferroelectric in bulk but in a superparaelectric state. The gate dielectric may be for instance of formula AXO, where A is a group I or II element, and X is titanium, niobium, zirconium and/or hafnium. Such a gate dielectricmay be formed for example by low temperature deposition of the gate dielectricor by using dopants of metal oxides to prevent domain growth, or both.