The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2012
Filed:
Oct. 16, 2010
Applicant:
John V. Veliadis, Hanover, MD (US);
Inventor:
John V. Veliadis, Hanover, MD (US);
Assignee:
Northrop Grumman Systems Corporation, Los Angeles, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/107 (2006.01);
U.S. Cl.
CPC ...
Abstract
An avalanche photodiode semiconductor device () for converting an impinging photon () includes a base n+ doped material layer () formed having a window section () for passing the photon (). An n− doped material layer () is formed on the n+ doped material layer () having a portion of a lower surface () suitably exposed. An n+ doped material layer () is formed on the n− doped material (). A p+ layer () formed on top of the n+ doped layer (). At least one guard ring () is formed in the n− doped layer ().