The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2012

Filed:

Dec. 24, 2009
Applicants:

Jong-mo Yeo, Yongin, KR;

Dae-hyun NO, Yongin, KR;

Do-hyun Kwon, Yongin, KR;

Choong-youl Im, Yongin, KR;

Soo-beom JO, Yongin, KR;

Sung-won Doh, Yongin, KR;

Il-jeong Lee, Yongin, KR;

Cheol-ho Yu, Yongin, KR;

Inventors:

Jong-Mo Yeo, Yongin, KR;

Dae-Hyun No, Yongin, KR;

Do-Hyun Kwon, Yongin, KR;

Choong-Youl Im, Yongin, KR;

Soo-Beom Jo, Yongin, KR;

Sung-Won Doh, Yongin, KR;

Il-Jeong Lee, Yongin, KR;

Cheol-Ho Yu, Yongin, KR;

Assignee:

Samsung Mobile Display Co., Ltd., Giheung-Gu, Yongin, Gyunggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
Abstract

A flat panel display apparatus that can be manufactured with less patterning operations using a mask, and a method of manufacturing the same, the flat panel display apparatus including a substrate; an active layer of a thin film transistor (TFT); a first bottom electrode and a first top electrode of a capacitor; a first insulation layer formed on the substrate; a gate bottom electrode and a gate top electrode corresponding to the channel region; a second bottom electrode and a second top electrode of the capacitor; a pixel bottom electrode and a pixel top electrode; a second insulation layer formed on the gate electrode, the second electrode of the capacitor, and the pixel top electrode; and a source electrode and a drain electrode formed on the second insulation layer.


Find Patent Forward Citations

Loading…