The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2012
Filed:
Oct. 28, 2009
Hsiang-yuan Cheng, Taipei, TW;
Shin-chuan Chiang, Taipei, TW;
Shih-hsiang Lai, Taipei County, TW;
Chin-chih Yu, Hsinchu, TW;
Bor-chuan Chuang, Tainan County, TW;
Hsiang-Yuan Cheng, Taipei, TW;
Shin-Chuan Chiang, Taipei, TW;
Shih-Hsiang Lai, Taipei County, TW;
Chin-Chih Yu, Hsinchu, TW;
Bor-Chuan Chuang, Tainan County, TW;
Taiwan TFT LCD Association, Hsinchu, TW;
Chunghwa Picture Tubes, Ltd., Taoyuan, TW;
Au Optronics Corporation, Hsinchu, TW;
Hannstar Display Corporation, Tainan County, TW;
Chi Mei Optoelectronics Corporation, Tainan County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
TPO Displays Corp., Miao-Li County, TW;
Abstract
A thin film transistor is provided. The thin film transistor includes a substrate, a gate, a source/drain, an insulating layer, and a semiconductor active layer. The gate and the source/drain are respectively deposited on the substrate and are separated by the insulating layer on the substrate. The semiconductor active layer connects the source and the drain. The material of the semiconductor active layer is a semiconductor precursor which produces semiconductor property after being irradiated by a light source. A liquid crystal display which includes the above thin film transistor is also provided.