The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2012
Filed:
Jun. 18, 2007
Tohru Saitoh, Osaka, JP;
Takahiro Kawashima, Osaka, JP;
Tohru Saitoh, Osaka, JP;
Takahiro Kawashima, Osaka, JP;
Panasonic Corporation, Osaka, JP;
Abstract
A source electrodewhich is connected to a portion of at least one semiconductor nanostructureamong a plurality of semiconductor nanostructures, a drain electrodeconnected to another portion of the semiconductor nanostructure, and a gate electrodecapable of controlling electrical conduction of the semiconductor nanostructureare included. The semiconductor nanostructuresinclude a low concentration regionhaving a relatively low doping concentration and a pair of high concentration regionshaving a higher doping concentration than that of the low concentration regionand being connected to both ends of the low concentration region. The doping concentration of the high concentration regionsis 1×10cmor more; the length of the low concentration regionis shorter than a length of the gate electrodealong a direction from the source electrodeto the drain electrode; and the length of the gate electrodeis shorter than the interspace between the source electrodeand the drain electrode