The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2012
Filed:
Jul. 16, 2008
Chih-chao Yang, Poughkeepsie, NY (US);
Louis C. Hsu, Fishkill, NY (US);
Rajiv V. Joshi, Yorktown Heights, NY (US);
Chih-Chao Yang, Poughkeepsie, NY (US);
Louis C. Hsu, Fishkill, NY (US);
Rajiv V. Joshi, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Solutions for forming dielectric interconnect structures are provided. Specifically, the present invention provides methods of forming a dielectric interconnect structure having a noble metal layer that is formed directly on a modified dielectric surface. In a typical embodiment, the modified dielectric surface is created by treating an exposed dielectric layer of the interconnect structure with a gaseous ion plasma. Under the present invention, the noble metal layer could be formed directly on an optional glue layer that is maintained only on vertical surfaces of any trench or via formed in the exposed dielectric layer. In addition, the noble metal layer may be provided along an interface between the via and an internal metal layer.