The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2012
Filed:
Dec. 23, 2008
Applicant:
Myung-ok Kim, Icheon-si, KR;
Inventor:
Myung-Ok Kim, Icheon-si, KR;
Assignee:
Hynix Semiconductor Inc., Icheon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 21/3205 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device and method of fabricating the same includes preparing a substrate, forming a plurality of conductive layer patterns on the substrate, forming a gate insulation layer on sidewalls of the conductive layer patterns, forming a pillar neck pattern between the conductive layer patterns, forming a pillar head over the pillar neck pattern and the conductive layer patterns, and forming a gate electrode surrounding the pillar neck pattern and forming a pillar head pattern by selectively etching the conductive layer patterns and the pillar head formed over the pillar neck pattern.