The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2012
Filed:
May. 11, 2009
Bruce Faure, Paris, FR;
Bruce Faure, Paris, FR;
S.O.I. Tec Silicon on Insulator Technologies, Bernin, FR;
Abstract
The invention relates to a process for fabricating a heterostructure. This process is noteworthy in that it comprises the following steps: a) a strained crystalline thin film is deposited on, or transferred onto, an intermediate substrate; b) a strain relaxation layer, made of crystalline material capable of being plastically deformed by a heat treatment at a relaxation temperature at which the material constituting the thin film deforms by elastic deformation is deposited on the thin film; c) the thin film and the relaxation layer are transferred onto a substrate; and d) a thermal budget is applied at least the relaxation temperature, so as to cause the plastic deformation of the relaxation layer and the at least partial relaxation of the thin film by elastic deformation, and thus to obtain the final heterostructure.