The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2012

Filed:

Mar. 27, 2008
Applicant:

Takashi Masuda, Komatsu, JP;

Inventor:

Takashi Masuda, Komatsu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for manufacturing a semiconductor device includes: forming a source electrode and a drain electrode on a substrate; forming an organic semiconductor layer including a π conjugated organic compound at least between the source electrode and the drain electrode; applying an application liquid on the organic semiconductor layer, the application liquid being made of a polymer of an alicyclic compound dissolved in a paraffin hydrocarbon solvent that is a carbocyclic compound without having aromaticity; forming a gate insulation layer including the polymer of the alicyclic compound by removing the paraffin hydrocarbon solvent from the application liquid; and forming a gate electrode on the gate insulation layer.


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