The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2012

Filed:

Jan. 15, 2010
Applicants:

Nathan F. Gardner, Sunnyvale, CA (US);

Michael R. Krames, Los Altos, CA (US);

Melvin B. Mclaurin, Mountain View, CA (US);

Sungsoo Yi, Sunnyvale, CA (US);

Inventors:

Nathan F. Gardner, Sunnyvale, CA (US);

Michael R. Krames, Los Altos, CA (US);

Melvin B. McLaurin, Mountain View, CA (US);

Sungsoo Yi, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/30 (2006.01); H01L 21/46 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method according to embodiments of the invention includes providing a substrate comprising a host and a seed layer bonded to the host. The seed layer comprises a plurality of regions. A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is grown on the substrate. A top surface of a semiconductor layer grown on the seed layer has a lateral extent greater than each of the plurality of seed layer regions.


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