The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2012

Filed:

Jan. 05, 2009
Applicants:

Amit Kumar Singh, Gainesville, FL (US);

Vijay Krishna, Gainesville, FL (US);

Brij M. Moudgil, Gainesville, FL (US);

Benjamin L. Koopman, Gainesville, FL (US);

Inventors:

Amit Kumar Singh, Gainesville, FL (US);

Vijay Krishna, Gainesville, FL (US);

Brij M. Moudgil, Gainesville, FL (US);

Benjamin L. Koopman, Gainesville, FL (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03C 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for electron beam nanolithography without the need for development step involves depositing a film of a resist comprising functionalized fullerenes on a substrate, and writing features by exposure to an electron beam with an accelerating voltage and dose rate sufficient to promote heating or thermal degradation of the functionalized fullerene in the irradiated volume such that a pattern is generated without a subsequent development step or with an aqueous developer. Lithographic features of about 1 nm or greater can be formed.


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